论文标题
增强的空间电荷有限的弯曲电子发射器电流
Enhanced space charge limited current for curved electron emitters
论文作者
论文摘要
可以在真空二极管上运输的最大电流受到空间电荷引起的力的限制。在平面二极管配置中，child-langmuir（cl）Law $ j_ {cl} \ sim v_g^{3/2}/d^2 $，其中$ v_g $是$ v_g $是二极管和$ d $之间的潜在差异，$ v_g $是$ v_g $是分离的。我们在此处使用非线性线电荷模型进行分析显示，该模型对于平面二极管配置中的弯曲发射极模型，极限电流遵守缩放关系$ J_ {SCL} \ simγ_Av_g^{3/2}/d^2 $ wery $γ_A$是$γ_a$是curved curved emitter的Apex Field Field Enlancement Field Field Enlancement Field Field Enlancement field curved curved emitter emitter emitter emitter emitter emitter emitter emitter emitter emitter emitter a。对于高度（$ h $）的发射极曲率半径（$ r_a $）比率，限制电流远远超过了平面值。使用两个弯曲的发射器形状的粒子中的粒子代码pasupat验证了结果。
The maximum current that can be transported across a vacuum diode is limited by forces arising due to space charge. In a planar diode configuration, the space charge limited (SCL) current density from a planar emitting patch is given by the Child-Langmuir (CL) law $J_{CL} \sim V_g^{3/2}/D^2$ where $V_g$ is the potential difference across the diode and $D$ is the separation between the anode and cathode. We show here analytically using the nonlinear line charge model that for a curved emitter in a planar diode configuration, the limiting current obeys the scaling relationship $J_{SCL} \sim γ_a V_g^{3/2}/D^2$ where $γ_a$ is the apex field enhancement factor of the curved emitter. For an emitter with large height ($h$) to apex radius of curvature ($R_a$) ratio, the limiting current far exceeds the planar value. The result is verified using the particle-in-cell code PASUPAT for two curved emitters shapes.
