论文标题

高声学 - 折对对比的语音电路:数值建模

High-acoustic-index-contrast phononic circuits: numerical modeling

论文作者

Wang, Wance, Shen, Mohan, Zou, Chang-Ling, Fu, Wei, Shen, Zhen, Tang, Hong X.

论文摘要

我们在数值上对声音集成电路的钥匙构建块进行建模,该电路可以在高声学索引波导中启用声子路由。我们的特别重点是硝化硅在塞普郡的音调平台上,该平台最近在其顶层表现出了高声限制,而无需使用悬挂结构。我们从具有子波长横截面的带状波导和环形谐振器中支持的各种横向声子模式的系统模拟开始。关于几何参数,对声子模式的模式限制和质量因子进行了研究。优化的环谐振器预测质量因子最高$ 10^{8} $。我们接下来研究了语音定向耦合器的设计,并提出了关键的设计参数,以实现平行波导中传播的模式之间实现强烈的evanscent耦合。最后,将插入的换能器电极包括在模拟中,以直接激发环谐振器以及微波输入和声音耗散之间的临界耦合。我们的工作提供了高声学语音电路中声子模式和功能性语音组件的全面数值表征,该电路补充了以前的理论并有助于声音集成电路的新兴领域。

We numerically model key building blocks of a phononic integrated circuit that enable phonon routing in high-acoustic-index waveguides. Our particular focus is on Gallium Nitride-on-sapphire phononic platform which has recently demonstrated high acoustic confinement in its top layer without the use of suspended structures. We start with systematic simulation of various transverse phonon modes supported in strip waveguides and ring resonators with sub-wavelength cross-section. Mode confinement and quality factors of phonon modes are numerically investigated with respect to geometric parameters. Quality factor up to $10^{8}$ is predicted in optimized ring resonators. We next study the design of the phononic directional couplers, and present key design parameters for achieving strong evanescent couplings between modes propagating in parallel waveguides. Last, interdigitated transducer electrodes are included in the simulation for direct excitation of a ring resonator and critical coupling between microwave input and phononic dissipation. Our work provides comprehensive numerical characterization of phonon modes and functional phononic components in high-acoustic-index phononic circuits, which supplements previous theories and contributes to the emerging field of phononic integrated circuits.

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