论文标题
Yb3+对溶胶 - 凝胶合成Ni-Zn纳米甲硅烷的结构,电气和光学特性的影响
Influence of Yb3+on the structural, electrical and optical properties of sol-gel synthesized Ni-Zn nanoferrites
论文作者
论文摘要
使用Ni0.5ZN0.5ZN0.5YBXFE2-XO4(X = 0.00、0.00、0.04、0.04、0.04、0.08、0.12、0.16和0.20)取代的多晶YB YB取代了NIZN纳米甲氟甲烯烯烃。单相立方尖晶石结构已通过X射线衍射(XRD)模式证实。随着YB3+浓度的增加,发现组成的较大晶格常数,而随着YB3+含量的增加,平均晶粒尺寸(52至18 nm)的平均晶格常数显着下降。所有现有元素的存在以及样品的纯度也已通过能量色散X射线光谱(EDS)分析得到证实。还在室温下还检查了频率依赖性的介电常数,介电损耗,介电松弛时间,AC和DC电阻率。 DC电阻率值以10到功率10(欧米茄-CM)的顺序找到至少四个阶,比通过常规方法制备的铁氧体大四个顺序。由于晶粒尺寸很小,电阻率属性的较大值,并使用Verwey和Deboer跳传导模型成功地解释了电阻率。使用Cole Cole地块阐明了晶粒和晶界抗性的贡献。对温度依赖性直流电阻率的研究证实了所有标题为组成的半导体性质,其中带隙(光学)从2.73 eV增加到3.25 eV,而YB含量的增加。对于组合物而言,高频率应用的潜在候选者是高频应用的潜在候选者,在高频降低涡流损失的情况下,这是显着的成就。
Polycrystalline Yb substituted NiZn nanoferrites with the compositions of Ni0.5Zn0.5YbxFe2-xO4 (x= 0.00, 0.04, 0.08, 0.12, 0.16 and 0.20) have been synthesized using sol gel auto combustion technique. Single phase cubic spinel structure has been confirmed by the X ray diffraction (XRD) patterns. Larger lattice constants of the compositions are found with increasing Yb3+ concentration while the average grain size (52 to 18 nm) has noticeable decrease as Yb3+ content is increased. The presence of all existing elements as well as the purity of the samples has also been confirmed from energy dispersive X ray spectroscopic (EDS) analysis. Frequency dependent dielectric constant, dielectric loss, dielectric relaxation time, AC and DC resistivity of the compositions have also been examined at room temperature. The DC resistivity value is found in the order of 10 to power 10 (omega-cm) which is at least four orders greater than the ferrites prepared by conventional method. This larger value of resistivity attributes due to very small grain size and successfully explained using the Verwey and deBoer hopping conduction model. The contribution of grain and grain boundary resistance has been elucidated using Cole Cole plot. The study of temperature dependent DC resistivity confirms the semiconducting nature of all titled compositions wherein bandgap (optical) increases from 2.73 eV to 3.25 eV with the increase of Yb content. The high value of resistivity is of notable achievement for the compositions that make them a potential candidate for implication in the high frequency applications where reduction of eddy current loss is highly required.