论文标题
半导体行业的量子成像
Quantum Imaging for Semiconductor Industry
论文作者
论文摘要
红外(IR)成像是制造样品质量控制测量的重要工具之一。标准IR成像技术使用直接测量,其中光源和检测器在IR范围内运行。由于IR光源或检测器的选择有限,因此可能会出现达到特定IR波长的挑战。在我们的工作中,我们基于量子成像技术执行间接IR显微镜。这种方法使我们可以用红外光探测样品,同时检测到可见的或近红外范围。因此,我们证明了在不同放大倍数下对硅芯片的IR量子成像,其中在1550 nm波长下探测样品,但检测在810 nm处进行。我们还分析了该技术的可能测量条件,并估算执行样品质量控制检查所需的时间。
Infrared (IR) imaging is one of the significant tools for the quality control measurements of fabricated samples. Standard IR imaging techniques use direct measurements, where light sources and detectors operate at IR range. Due to the limited choices of IR light sources or detectors, challenges in reaching specific IR wavelengths may arise. In our work, we perform indirect IR microscopy based on the quantum imaging technique. This method allows us to probe the sample with IR light, while the detection is shifted into the visible or near-IR range. Thus, we demonstrate IR quantum imaging of the silicon chips at different magnifications, wherein a sample is probed at 1550 nm wavelength, but the detection is performed at 810 nm. We also analyze the possible measurement conditions of the technique and estimate the time needed to perform quality control checks of samples.