论文标题
异质结构设计以实现高质量，高密度GAAS 2D电子系统，$ g $ -FACTOR倾向于零
Heterostructure design to achieve high quality, high density GaAs 2D electron system with $g$-factor tending to zero
论文作者
论文摘要
静液压是一种有用的工具，可以在固态材料中调整几个关键参数。例如，预计GAAS二维电子系统中的Landé$ g $ factor将从其批量价值$ g \ simeq-0.44 $变为零，甚至在足够大的液压压力下变为正值。尽管这是一个有趣的平台，以研究$ g = 0 $的系统中电子电子相互作用，但研究非常有限，因为随着静水压力的增加，GAAS 2DES密度显着降低。在这里，我们表明，基于压力依赖性导带比对的变化，一个简单的模型在定量上解释了这种通常观察到的趋势。此外，我们证明，通过创新的异质结构设计，2DES密度的降低可以抑制3倍以上。
Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Landé $g$-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value $g\simeq-0.44$ to zero and even to positive values under a sufficiently large hydrostatic pressure. Although this presents an intriguing platform to investigate electron-electron interaction in a system with $g=0$, studies are quite limited because the GaAs 2DES density decreases significantly with increasing hydrostatic pressure. Here we show that a simple model, based on pressure-dependent changes in the conduction band alignment, quantitatively explains this commonly observed trend. Furthermore, we demonstrate that the decrease in the 2DES density can be suppressed by more than a factor of 3 through an innovative heterostructure design.
