论文标题
在低温下打破大厅效应线性的简单机制
Simple mechanism that breaks the Hall effect linearity at low temperatures
论文作者
论文摘要
霍尔电阻$ r _ {\ textrm {xy}} $通常建议是线性磁场$ b $，只要该字段很小。我们在这里认为，在低温下，由于不均匀系统中的弱定位/抗钙化现象，这种线性被打破了，而在均匀的培养基中，这些效果不会影响$ r _ {\ textrm {xy}}}（b）$的线性场依赖性。我们使用平均场方法来计算不同两部分介质的大厅电阻，并表明这种非线性是可以观察到的。
Hall resistance $R_{\textrm{xy}}$ is commonly suggested to be linear-in-magnetic-field $B$, provided the field is small. We argue here that at low temperatures this linearity is broken due to weak localization/antilocalization phenomena in inhomogeneous systems, while in a uniform medium these effects do not affect the linear field dependence of $R_{\textrm{xy}}(B)$. We calculate the Hall resistance for different two-component media using a mean-field approach and show that this non-linearity is experimentally observable.
