论文标题
MOS $ _2 $晶体管中的栅极可调非易失性光学效应
Gate-tunable non-volatile photomemory effect in MoS$_2$ transistors
论文作者
论文摘要
非挥发性内存设备仅限于复杂设备的闪光体系结构。在这里，我们在MOS $ _2 $晶体管中提出了独特的光学效果。光学女性是基于光培养效果的 - 一种受控方式，是通过激光暴露和栅极电压应用结合使用单层MOS $ _2 $的自由电荷密度的受控方式。光载体促进了MOS $ _2 $的电导变化，导致具有高内存/OFF比率的光膜状态。这种记忆状态是非挥发性的，期望在数十年中保留多达50％的信息。此外，我们表明光电运算是栅极可调的，可以控制记录的内存状态。最后，我们提出了一个模型来解释光接种，并提供了支持这种现象的实验证据。总而言之，我们的工作包括非挥发性内存设备中的MOS $ _2 $光传递器，并将内存应用程序的可能性扩展到传统的内存体系结构之外。
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodoping promotes changes on the conductance of MoS$_2$ leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50 % of the information for tens of years. Furthermore, we show that the photodoping is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodoping, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS$_2$ phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures.
