论文标题
使用粘合晶片的200 mm传感器开发
200 mm Sensor Development Using Bonded Wafers
论文作者
论文摘要
过去30年来，由高电阻率，浮动区，硅材料制造的传感器一直是顶点探测器和跟踪器的基础。对于现有的CMS跟踪器，这些设备的区域已从几平方厘米增加到$ \> 200 \ m^2 $。高光度大强壮的强生对撞机（HL-LHC），CMS和ATLAS Tracker升级将需要超过$ 200 \ m^2 $的硅和CMS高粒度热量表（HGCAL）需要超过600美元以上\ m^2 $。这些设备组装的成本和复杂性与每个模块的面积有关，这又由硅传感器的尺寸设置。除大面积外，设备还必须坚硬，这需要使用将传感器变薄至200微米或更少。晶圆变薄和大晶片直径的结合是一个重大的技术挑战，这是这项工作的主题。我们描述了使用晶圆粘合技术在200毫米$ wafers上开发薄传感器的工作。据报道，据报道，据报道，据报道，浮动区域，硅硅和硅 - 硅粘合晶片技术的开发结果。
Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to $\> 200\ m^2$ for the existing CMS tracker. High Luminosity Large Hadron Collider (HL-LHC), CMS and ATLAS tracker upgrades will each require more than $200\ m^2$ of silicon and the CMS High Granularity Calorimeter (HGCAL) will require more than $600\ m^2$. The cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the size of the silicon sensors. In addition to large area, the devices must be radiation hard, which requires the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work. We describe work on development of thin sensors on $200 mm$ wafers using wafer bonding technology. Results of development runs with float zone, Silicon-on-Insulator and Silicon-Silicon bonded wafer technologies are reported.
