论文标题
位错是高阶拓扑绝缘子的批量探测器
Dislocation as a bulk probe of higher-order topological insulators
论文作者
论文摘要
拓扑材料占据了现代冷凝物理物理学的中心阶段,因为它们具有稳健的金属边缘或受拓扑不变的表面状态,表征了散装中的电子带结构。高阶拓扑(热)状态扩展了这种常规的宽大边界对应关系,因此它们托管在较低维数(例如角落和铰链)下定位的模式。从理论上讲,在这里,我们证明了晶体材料中普遍存在的缺陷可以探测高阶拓扑,最近在各种平台上实现了高阶拓扑。我们发现,热绝缘子通过对称受保护的有限能源内gap电子模式对位置的响应,该模式位于缺陷核心,该模式源于热质量域壁的方向与错位的汉堡矢量之间的相互作用。因此,仅当汉堡矢量指向较低维度的无间隙边界时,这些模式才变得无间隙。我们的发现是由于在广泛的热晶体中的扩展散装对应关系以及通过块状拓扑晶格缺陷以及光子和语音或机械超材料的系统探测。
Topological materials occupy the central stage in the modern condensed matter physics because of their robust metallic edge or surface states protected by the topological invariant, characterizing the electronic band structure in the bulk. Higher-order topological (HOT) states extend this usual bulk-boundary correspondence, so they host the modes localized at lower-dimensional boundaries, such as corners and hinges. Here we theoretically demonstrate that dislocations, ubiquitous defects in crystalline materials, can probe higher-order topology, recently realized in various platforms. We uncover that HOT insulators respond to dislocations through symmetry protected finite-energy in-gap electronic modes, localized at the defect core, which originate from an interplay between the orientation of the HOT mass domain wall and the Burgers vector of the dislocation. As such, these modes become gapless only when the Burgers vector points toward lower-dimensional gapless boundaries. Our findings are consequential for the systematic probing of the extended bulk-boundary correspondence in a broad range of HOT crystals, and photonic and phononic or mechanical metamaterials through the bulk topological lattice defects.