论文标题
高度电阻ZnO门在边缘磁子质上抑制门筛选
Suppression of Gate Screening on Edge Magnetoplasmons by Highly Resistive ZnO Gate
论文作者
论文摘要
We investigate a way to suppress high-frequency coupling between a gate and low-dimensional electron systems in the gigahertz range by measuring the velocity of edge magnetoplasmons (EMPs) in InAs quantum Hall systems.We compare the EMPvelocity in three samples with different electromagnetic environments-one has a highly resistive zinc oxide (ZnO) top gate, another has a normal metal (Ti/Au) top门，另一个没有门。 ZnO门样品中测得的EMP速度比Ti/Au门样品中的一个数量级大一个数量级，并且与未测量样品中的速度几乎相同。众所周知，Ti/Au门样品中较小的速度是由于EMP中的电场筛选。 ZnO门样品中门筛选效果的抑制使我们能够在更改电子密度时测量未筛选的EMP的速度。它还提供了一种避免量子厅边缘通道和栅极电极之间不必要的高频耦合的方法。
We investigate a way to suppress high-frequency coupling between a gate and low-dimensional electron systems in the gigahertz range by measuring the velocity of edge magnetoplasmons (EMPs) in InAs quantum Hall systems.We compare the EMPvelocity in three samples with different electromagnetic environments-one has a highly resistive zinc oxide (ZnO) top gate, another has a normal metal (Ti/Au) top gate, and the other does not have a gate. The measured EMP velocity in the ZnO gate sample is one order of magnitude larger than that in the Ti/Au gate sample and almost the same as that in the ungated sample. As is well known, the smaller velocity in the Ti/Au gate sample is due to the screening of the electric field in EMPs. The suppression of the gate screening effect in the ZnO gate sample allows us to measure the velocity of unscreened EMPs while changing the electron density. It also offers a way to avoid unwanted high-frequency coupling between quantum Hall edge channels and gate electrodes.
