论文标题
弯曲石墨烯超晶格中平坦带和相关状态的证据
Evidence of Flat Bands and Correlated States in Buckled Graphene Superlattices
论文作者
论文摘要
二维原子晶体可以响应外部影响(例如底物方向或应变)从根本上改变其性质,从而在电子结构方面产生了基本的新材料。一个引人注目的例子是在双层 - 格拉烯中创建平坦带,以在两层方向之间进行某些“魔术”扭曲角度。这些平坦带中淬灭的动力学促进了电子电子相互作用,并促进了强相关阶段的出现,例如超导性和相关的绝缘剂。但是,找到平坦波段出现在扭曲的双层石墨烯中所需的精美微调,这对制造和可扩展性构成了挑战。在这里,我们提出了一种创建不涉及微调的平坦频带的替代路线。使用扫描隧穿显微镜和光谱术以及数值模拟,我们证明了放置在原子纤维基材上的石墨烯单层可以被迫进行屈曲转换,从而导致定期调制的伪磁场,从而创建了固定的扁平式材料,从而与平面电子带相反。通过静电掺杂将Fermi-Level带入这些平坦带中,我们观察到伪造的耗竭,这标志着相关状态的出现。 2D水晶屈曲的描述方法为创建其他超级晶格系统,尤其是探索平面频带特征的相互作用现象特征提供了一种策略。
Two-dimensional atomic crystals can radically change their properties in response to external influences such as substrate orientation or strain, resulting in essentially new materials in terms of the electronic structure. A striking example is the creation of flat-bands in bilayer-graphene for certain 'magic' twist-angles between the orientations of the two layers. The quenched kinetic-energy in these flat-bands promotes electron-electron interactions and facilitates the emergence of strongly-correlated phases such as superconductivity and correlated-insulators. However, the exquisite fine-tuning required for finding the magic-angle where flat-bands appear in twisted-bilayer graphene, poses challenges to fabrication and scalability. Here we present an alternative route to creating flat-bands that does not involve fine tuning. Using scanning tunneling microscopy and spectroscopy, together with numerical simulations, we demonstrate that graphene monolayers placed on an atomically-flat substrate can be forced to undergo a buckling-transition, resulting in a periodically modulated pseudo-magnetic field, which in turn creates a post-graphene material with flat electronic bands. Bringing the Fermi-level into these flat-bands by electrostatic doping, we observe a pseudogap-like depletion in the density-of-states, which signals the emergence of a correlated-state. The described approach of 2D crystal buckling offers a strategy for creating other superlattice systems and, in particular, for exploring interaction phenomena characteristic of flat-bands.