论文标题
二维量子点阵列中的远程电容传感
Remote capacitive sensing in two-dimension quantum-dot arrays
论文作者
论文摘要
我们研究了使用铸造式完全消耗的硅在绝缘子（FD-SOI）过程中制造的绝缘子纳米线磁场晶体管上硅纳米线磁场晶体管上的栅极定义的量子点。一系列包裹在硅纳米线上的拆分门自然会产生$ 2 \ times n $ biinear阵列沿单个纳米线沿线。首先，我们研究了这样2 $ \ times $ 2的阵列中量子点的电容耦合，然后显示如何通过两个平行的硅纳米线扩展到通过共享的，共享的，电气分离的，“浮动”电极一起扩展。用一个量子点作为单电子盒传感器运行，浮闸门可以增强电荷灵敏度范围，从而使其能够在单独的硅纳米线中检测电荷状态过渡。通过比较来自多个设备的测量值，我们通过量化电荷灵敏度衰减作为点传感器分离的函数和在双纳米线结构中的构函数来说明浮动门的影响。
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2$\times$2 array, and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, 'floating' electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure.
