论文标题
双相v $ _3 $ ga的超导和反铁磁特性
Superconducting and Antiferromagnetic Properties of Dual-Phase V$_3$Ga
论文作者
论文摘要
二进制复合v $ _3 $ ga可以展示两个近平衡阶段，由超导的A15结构组成，而Heusler D0 $ _3 $结构是半导体和反铁磁。密度功能理论的计算表明，这两个阶段紧密地退化，仅分别约为10 MeV/Atom。在散装样品上进行的磁化测量结果显示出低于14 K的超导行为。这些结果表明，使用V $ _3 $ GA用于使用超导性和反铁磁性在相同温度下使用量子技术设备的可能性。
The binary compound V$_3$Ga can exhibit two near-equilibrium phases, consisting of the A15 structure that is superconducting, and the Heusler D0$_3$ structure that is semiconducting and antiferromagnetic. Density functional theory calculations show that the two phases are closely degenerate, being separated by only ~10 meV/atom. Magnetization measurements on bulk-grown samples show superconducting behavior below 14 K. These results indicate the possibility of using V$_3$Ga for quantum technology devices utilizing both superconductivity and antiferromagnetism at the same temperature.
