论文标题
SIGE BICMOS技术中整体硅像素原型的时间分辨率和功耗
Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology
论文作者
论文摘要
SIGE BICMOS技术可用于生产超快速的低功率硅像素传感器，即使没有内部增益机制，也可以提供最新的时间分辨率。此类传感器的开发需要确定可能降低正时性能和传感器时间分辨率对放大器功耗的依赖性的特征的主要因素。用$ \ MathRM {^{90} SR} $ sg13g2技术中的原型传感器来源的测量结果显示，在较高功率消耗的7美元$ \MATHRMμ$ a和45 PS的放大器电流下的时间分辨率为140 ps。一个完整的模拟表明，用于校正时间步行的信号阈值的测量的分辨率是影响时间性能的主要因素。
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. Measurements with a $ \mathrm{^{90}Sr} $ source of a prototype sensor produced in SG13G2 technology from IHP Microelectronics, shows a time resolution of 140 ps at an amplifier current of 7 $ \mathrmμ $A and 45 ps at higher power consumption. A full simulation shows that the resolution on the measurement of the signal time-over-threshold, used to correct for time walk, is the main factor affecting the timing performance.
