论文标题
可能的应变引起的莫特差距崩溃在1T-TAS $ _2 $中
Possible strain induced Mott gap collapse in 1T-TaS$_2$
论文作者
论文摘要
调整问题的电子特性在科学研究和应用中具有基本兴趣。最近，在原始的层次过渡金属二分法中，莫特绝缘子金属转变1T-TAS $ _2 $，并由光激发，栅极控制的插入或电压脉冲触发。然而，突然的绝缘体 - 金属过渡阻碍了对过渡方式的探索。在这里，我们将这种压力报告为可能诱导Mott Gap Gap崩溃的新调整参数，以1T-TAS $ _2 $。在应变富的区域中，我们发现一个镶嵌状态在不同域内具有不同状态的电子密度。在瓦楞纸表面，我们进一步观察并分析了从莫特间隙状态到金属状态的平稳进化。我们的结果为理解绝缘子 - 金属过渡的理解提供了新的灯光，并在将来的开关设备设计上促进了可控的应变工程。
Tuning the electronic properties of a matter is of fundamental interest in scientific research as well as in applications. Recently, the Mott insulator-metal transition has been reported in a pristine layered transition metal dichalcogenides 1T-TaS$_2$, with the transition triggered by an optical excitation, a gate controlled intercalation, or a voltage pulse. However, the sudden insulator-metal transition hinders an exploration of how the transition evolves. Here, we report the strain as a possible new tuning parameter to induce Mott gap collapse in 1T-TaS$_2$. In a strain-rich area, we find a mosaic state with distinct electronic density of states within different domains. In a corrugated surface, we further observe and analyze a smooth evolution from a Mott gap state to a metallic state. Our results shed new lights on the understanding of the insulator-metal transition and promote a controllable strain engineering on the design of switching devices in the future.
