论文标题
氧气空缺诱导的电子结构修饰KTAO $ _3 $
Oxygen vacancy induced electronic structure modification of KTaO$_3$
论文作者
论文摘要
带绝缘子Laalo $ _3 $和SRTIO $ _3 $之间的金属接口的观察导致了巨大的努力,以了解现象的起源,并搜索托管此类二维电子气体(2-DEG)的其他系统。但是,对2度起源的理解通常会被阻碍,因为几种可能的机制,例如极性灾难,阳离子互化和氧空位(OV)等。沉重元素的存在使KTAO $ _3 $(KTO)的2-DEG成为研究旋转轨道耦合驱动的新型电子和磁现象的潜在平台。在这项工作中,我们研究了OV的唯一效果,这使KTO金属构成。我们的详细\ textIt {ab intio}计算不仅在存在OV的情况下找到部分填充的传导带,而且还可以预测由于TA周围OVS的线性聚类,因此可以预测高度局部的中间隙状态。光致发光的测量确实揭示了这种中间隙状态和O $ K $ -EDGE-EDGE X射线吸收光谱的存在,发现在TA $ t_ {2g}^*$ antibonding状态中发现了电子掺杂。目前的工作表明,在解释基于KTO的2度基于KTO的金属行为时,应该对KTO底物中的OVS可能存在谨慎。
The observation of metallic interface between band insulators LaAlO$_3$ and SrTiO$_3$ has led to massive efforts to understand the origin of the phenomenon as well as to search for other systems hosting such two dimensional electron gases (2-DEG). However, the understanding of the origin of the 2-DEG is very often hindered as several possible mechanisms such as polar catastrophe, cationic intermixing and oxygen vacancy (OV) etc. can be operative simultaneously. The presence of a heavy element makes KTaO$_3$ (KTO) based 2-DEG a potential platform to investigate spin orbit coupling driven novel electronic and magnetic phenomena. In this work, we investigate the sole effect of the OV, which makes KTO metallic. Our detailed \textit{ab initio} calculations not only find partially filled conduction bands in the presence of an OV but also predict a highly localized mid-gap state due to the linear clustering of OVs around Ta. Photoluminescence measurements indeed reveal the existence of such mid-gap state and O $K$-edge X-ray absorption spectroscopy finds electron doping in Ta $t_{2g}^*$ antibonding states. This present work suggests that one should be cautious about the possible presence of OVs within KTO substrate in interpreting metallic behavior of KTO based 2-DEG.