论文标题
石墨烯中的杂质共振效应$ vs $杂质的位置，集中和sublattice职业
Impurity resonance effects in graphene $vs$ impurity location, concentration and sublattice occupation
论文作者
论文摘要
石墨烯的独特电子带结构及其在电荷中立点附近的半金属特征对杂质效应敏感。使用Lifshitz和Anderson杂质模型，我们详细研究了疾病在石墨烯的电子带结构中诱导的光谱现象，即，共振，准间隙，绑定状态，杂质子频段的形成及其对电子带的整体影响以及相关的Mott Mott-Mott-Like Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metal-Metultators。我们对替代性和吸附的现实杂质进行系统的分析和数值研究，重点是源于杂质Adatoms位置（顶部，桥梁和空心位置），浓度，宿主sublattice占用，扰动强度等的影响。
Unique electronic band structure of graphene with its semi-metallic features near the charge neutrality point is sensitive to impurity effects. Using the Lifshitz and Anderson impurity models, we study in detail the disorder induced spectral phenomena in the electronic band structure of graphene, namely, the formation of resonances, quasi-gaps, bound states, impurity sub-bands, and their overall impact on the electronic band restructuring and the associated Mott-like metal-insulator transitions. We perform systematic analytical and numerical study for realistic impurities, both substitutional and adsorbed, focusing on those effects that stem from the impurity adatoms locations (top, bridge, and hollow positions), concentration, host sublattice occupation, perturbation strengths, etc. Possible experimental and practical implications are discussed as well.
