论文标题
2H-1T'MOS $ _2 $ schottky屏障，排放状态和接触阻力来自第一原理
Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS$_2$ lateral metal-semiconductor junctions from first-principles
论文作者
论文摘要
我们研究了通过非平衡绿色功能计算的2H-1T'os $ _2 $横向金属 - 副导体（M-S）交界的有限偏置传输性能，旨在与现场效应晶体管中的2D通道接触。我们的结果表明，（a）尽管线和平面偶极子的根本不同，但Schottky屏障高度对2D和3D M-S交界处的兴奋剂和应用偏差的变化的反应类似，（b）2H-1T'MOS $ $ _2 $ $ _2 $横向连接来自Fermi级别的频率，（c）齐射的（c）Armchair Interfiese（c）Armchair Interfiess，c） （d）相对于$ n $频道的1T'联系人的联系将降低4-10倍，并且（e）接触到中间掺杂的$ n $（$ p $）频道在现场（热离子）排放制度中运行。我们还提供了改进的程序，以实验确定2D材料连接中的排放状态。
We have studied the finite bias transport properties of a 2H-1T' MoS$_2$ lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our results indicate that (a) despite the fundamentally different electrostatics of line and planar dipoles, the Schottky barrier heights respond similarly to changes in doping and applied bias in 2D and 3D M-S junctions, (b) 2H-1T' MoS$_2$ lateral junctions are free from Fermi level pinning, (c) armchair interfaces have superior contacting properties vs.\ zigzag interfaces, (d) 1T' contacts to $p$ channels will present a reduced contact resistance by a factor of 4-10 with respect to $n$ channels and (e) contacts to intermediately doped $n$ ($p$) channels operate in the field (thermionic) emission regime. We also provide an improved procedure to experimentally determine the emission regime in 2D material junctions.
