论文标题
六角硼硼化硼的明亮量子发射器的谷物依赖性生长
Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride
论文作者
论文摘要
六角硼硝化硼的点缺陷由于其明亮且可光稳定的室温发射而成为有希望的量子光源。在这项工作中，我们研究了镍基板上化学蒸气沉积生长过程中量子发射器的掺入。结合了一系列特征技术，我们证明了量子发射器的掺入仅限于（001）面向的镍晶粒。这些发射器在亮度和稳定性方面表现出改善的发射特性。我们进一步利用了这些发射器，并将它们与来自源头的紧凑型光天线增强的光收集集成在一起。混合设备的平均饱和计数速率约为2.9 x106 cps，平均光子纯度约为90％。我们的结果推进了HBN中的空间分布量子发射器的受控生成，并展示了迈向具有最高收集效率的片上设备的关键步骤。
Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate. Combining a range of characterization techniques, we demonstrate that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. We further utilize these emitters and integrate them with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ~2.9 x106 cps and an average photon purity of ~90%. Our results advance the controlled generation of spatially distributed quantum emitters in hBN and demonstrate a key step towards on-chip devices with maximum collection efficiency.
