论文标题
拓扑绝缘膜的结构和化学兼容的生物材料底物
Structurally and Chemically Compatible BiInSe3 Substrate for Topological Insulator Thin Films
论文作者
论文摘要
外延膜的质量在很大程度上取决于它们与底物的结构和化学匹配：它们匹配越近，膜质量就越好。拓扑绝缘子（TI），例如BI2SE3薄膜，也不例外。但是，在结构和化学上与Ti膜相匹配的商业底物在其他电子材料通常可用的水平上均与Ti膜相匹配。在这里，我们将BiinSe3散装晶体介绍为BI2SE3薄膜的最佳底物。由于BiinSe3底物提供的结构和化学匹配，这些薄膜表现出比其他基材上的表面形态，低缺陷密度和更高的HALL迁移率。 BiinSe3底物可以加速TI研究和应用的进步。
Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: the more closely they match, the better the film quality is. Topological insulators (TI) such as Bi2Se3 thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe3 bulk crystal as the best substrate for Bi2Se3 thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe3 substrate. BiInSe3 substrate could accelerate the advance of TI research and applications.
