论文标题
非磁性Weyl半劳资薄膜的分子束外延生长
Molecular beam epitaxy growth of nonmagnetic Weyl semimetal LaAlGe thin film
论文作者
论文摘要
在这里，我们报告了一种详细的方法，该方法是通过分子束外延及其结构和电性特征的非磁性韦基半膜薄膜（100）底物上的薄膜（100）底物。在793 K的温度下，将50 nm厚的劳格膜沉积并在原位退火16小时。成长的高质量膜显示出均匀的表面地形，接近理想的化学计量，并具有以身体为中心的四方晶体结构。温度依赖性的纵向电阻率可以通过温度范围5-40 K中的主要带S-D电子散射来理解。HALL的测量证实了膜的半金属性质，电子占主导地位的电荷载体密度接近7.15*10^21 cm^-3在5 k。
Here, we report a detailed method of growing LaAlGe, a non-magnetic Weyl semimetal, thin film on silicon(100) substrates by molecular beam epitaxy and their structural and electrical characterizations. 50 nm thick LaAlGe films were deposited and annealed for 16 hours in situ at a temperature 793 K. As-grown high-quality films showed uniform surface topography and near ideal stoichiometry with a body-centered tetragonal crystal structure. Temperature-dependent longitudinal resistivity can be understood with dominant interband s-d electron-phonon scattering in the temperature range 5-40 K. Hall measurements confirmed the semimetallic nature of the films with electron dominated charge carrier density near 7.15*10^21 cm^-3 at 5 K.
