论文标题
铁磁Mn $ _5 $ ge $ _3 $ c $ _x $薄膜的异常nernst效果
Anomalous Nernst effect in ferromagnetic Mn$_5$Ge$_3$C$_x$ thin films on insulating sapphire
论文作者
论文摘要
研究铁磁体的热电特性对于开发未来的微电器设备，以进行有效的能量转换目的。铁磁Mn $ _5 $ ge $ _3 $ c $ _x $薄膜，质量温度高达$ t _ {\ rm c} $ = 450 k远高于室温，这是通过整合CMOS异质结构的旋转式应用的潜在候选。在这项工作中，尤其是热电功率，已经对磁铁溅射的薄膜（11-20）底物进行了实验研究。随着磁化强度和异常霍尔效应的早期研究，ANE随着碳含量X的增加而逐渐增加至X = 0.8获得的最大值。与父级$ _5 $ ge $ _3 $化合物相比，ANE强烈增强了三分之二。但是，对于x = 0.8，我们观察到计算的ANE与测量值的明显偏差。
Investigating the thermoelectric properties of ferromagnets is important for the development of future microelectronic devices for efficient energy conversion purposes. Ferromagnetic Mn$_5$Ge$_3$C$_x$ thin films with a Curie temperature up to $T_{\rm C}$ = 450 K well above room temperature are potential candidates for spintronic applications by integration into CMOS heterostructures. In this work, the thermoelectric power, in particular, the anomalous Nernst effect (ANE) has been investigated experimentally for magnetron sputtered thin films on sapphire (11-20) substrates. The ANE gradually increases with increasing carbon content x up to a maximum value obtained for x=0.8 in line with earlier investigations of the magnetization and anomalous Hall effect. The ANE is strongly enhanced by a factor three compared to the parent Mn$_5$Ge$_3$ compound. However, for x=0.8 we observe a clear deviation of the calculated ANE from the measured values.
