论文标题
使用电场在锰表面切换摩擦
Switching friction at a manganite surface using electric fields
论文作者
论文摘要
我们报告了纳米级阿斯伯特与la $ _ {0.55} $ ca $ _ {0.45} $ mno $ _3 $ _3 $(lcmo)薄膜的接触时对摩擦力的主动控制。我们在超高真空条件下使用摩擦力显微镜来测量摩擦力,因为我们通过电场诱导的电阻转换改变膜电阻状态。当探测的局部区域切换到导电状态时,绝缘状态的摩擦力很高,并且明显变为较低的值。切换回绝缘状态后,摩擦力再次增加。因此,我们展示了对摩擦的主动控制,而无需改变接触温度或压力。通过与金属对绝缘体转变的摩擦测量以及应用电压对粘附的影响进行比较,我们排除了电子激发,静电力和接触面积的变化,这是电阻转换对摩擦的影响的原因。取而代之的是,我们认为摩擦受到声子松弛时间的限制,这些松弛时间通过MNO6八面体的扭曲而强烈耦合到电子自由度。通过电场控制摩擦力的概念应适用于该场在声子寿命中产生强烈变化的任何材料。
We report active control of the friction force at the contact between a nanoscale asperity and a La$_{0.55}$Ca$_{0.45}$MnO$_3$ (LCMO) thin film using electric fields. We use friction force microscopy under ultrahigh vacuum conditions to measure the friction force as we change the film resistive state by electric field-induced resistive switching. Friction forces are high in the insulating state and clearly change to lower values when the probed local region is switched to the conducting state. Upon switching back to an insulating state, the friction forces increase again. Thus, we demonstrate active control of friction without having to change the contact temperature or pressure. By comparing with measurements of friction at the metal-to-insulator transition and with the effect of applied voltage on adhesion, we rule out electronic excitations, electrostatic forces and changes in contact area as the reasons for the effect of resistive switching on friction. Instead, we argue that friction is limited by phonon relaxation times which are strongly coupled to the electronic degrees of freedom through distortions of the MnO6 octahedra. The concept of controlling friction forces by electric fields should be applicable to any materials where the field produces strong changes in phonon lifetimes.