论文标题
抗磁磁性CRSB中Néel载体的填充，应变和电场的影响
Effects of filling, strain, and electric field on the Néel vector in antiferromagnetic CrSb
论文作者
论文摘要
CRSB是一种分层的抗铁磁铁（AFM），具有垂直磁各向异性，高néel温度和大型自旋轨道耦合（SOC），这使其对AFM Spin-Spin-Spin-Spin-tronic应用变得有趣。为了阐明NéelVector控制的各种机制，使用密度功能理论确定并分析应变，带填充和电场对大量和薄膜CRSB的磁各向异性能量（MAE）的影响。散装晶体的MAE很大（单位单元1.2 MeV）。由于CR-SB键具有显着的离子性质，因此有限的平板受终端终止的强烈影响。将散装晶体截断为一个用Cr终止的薄膜，另一个表面终止于SB断裂反转对称性，在整个膜上产生了较大的电荷偶极子和平均电场，并破坏了自旋堕落，因此薄膜变成了Ferrimagnet。减少了MAE，以使其符号可以通过逼真的应变切换，并且大SOC产生了固有的电压控制的磁各向异性（VCMA）。用CR终止在两个面上终止的平板仍然是补偿的AFM，但补偿是在镜子对称的CR对之间非局部发生的。矩的平面比对是优选的，MAE的幅度保持较大，类似于散装的大小，并且对填充相对不敏感。
CrSb is a layered antiferromagnet (AFM) with perpendicular magnetic anisotropy, a high Néel temperature, and large spin-orbit coupling (SOC), which makes it interesting for AFM spintronic applications. To elucidate the various mechanisms of Néel vector control, the effects of strain, band filling, and electric field on the magnetic anisotropy energy (MAE) of bulk and thin-film CrSb are determined and analysed using density functional theory. The MAE of the bulk crystal is large (1.2 meV per unit cell). Due to the significant ionic nature of the Cr-Sb bond, finite slabs are strongly affected by end termination. Truncation of the bulk crystal to a thin film with one surface terminated with Cr and the other surface terminated with Sb breaks inversion symmetry, creates a large charge dipole and average electric field across the film, and breaks spin degeneracy, such that the thin film becomes a ferrimagnet. The MAE is reduced such that its sign can be switched with realistic strain, and the large SOC gives rise to an intrinsic voltage controlled magnetic anisotropy (VCMA). A slab terminated on both faces with Cr remains a compensated AFM, but with the compensation occurring nonlocally between mirror symmetric Cr pairs. In-plane alignment of the moments is preferred, the magnitude of the MAE remains large, similar to that of the bulk, and it is relatively insensitive to filling.
