论文标题
用于精确控制辐射的仪器，带电的光束配置文件测量和实时通电监视超过$ 10^{16} $ n $ _ {\ textrm {eq}} $/cm $^{2} $
An Instrument for Precision Controlled Radiation Exposures, Charged Beam Profile Measurement, and Real-time Fluence Monitoring Beyond $10^{16}$ n$_{\textrm{eq}}$/cm$^{2}$
论文作者
论文摘要
已经开发了一种仪器，用于精确控制的电子设备和粒子梁中材料样品的暴露。该仪器同时提供了光束轮廓和接收的通量的实时记录。该系统能够以尺寸尺度处理从毫米到以数十厘米测量的横截面的扩展对象等尺寸处理设备。该仪器已被证明可以在几次$ 10^{16} $ 1-mev-neutron-equivalent/cm $^{2} $（n $ _ {\ textrm {eq {eq}} $）中有效运行。系统的定位器部分包括一组远程可控的样品持有者，这些样品持有人结合了用于样品功率和读数的冷却和界面，所有样品均由低激活技术构建。系统的监视成分样品将辐射耐硅二极管的电流或电压直接放在光束路径中。
An instrument has been developed for precision controlled exposures of electronic devices and material samples in particle beams. The instrument provides simultaneously a real time record of the profile of the beam and the fluence received. The system is capable of treating devices with dimensional scales ranging from millimeters to extended objects of cross sections measured in tens of square centimeters. The instrument has been demonstrated to operate effectively in integrated fluences ranging up to a few times $10^{16}$ 1-MeV-neutron-equivalent/cm$^{2}$ (n$_{\textrm{eq}}$). The positioner portion of the system comprises a set of remotely controllable sample holders incorporating cooling and interfaces for sample power and readout, all constructed from low activation technologies. The monitoring component of the system samples the current or voltage of radiation tolerant silicon diodes placed directly in the path of the beam.
