论文标题
抗铁磁莫特绝缘子CEOI的外延生长和带状结构
Epitaxial Growth and Band Structure of Antiferromagnetic Mott Insulator CeOI
论文作者
论文摘要
通过DFT+U计算，预测Van der Waals材料CEOI被预测为一种分层的抗铁磁莫特绝缘子。我们通过使用分子束外延成功地将CEOI膜成功地将CEOI膜降低至单层/6H-SIC（0001）底物。通过{\ it-intu}扫描隧道显微镜和光谱学研究膜，该扫描式隧道显微镜和光谱法显示了4.4 eV的带隙。也存在具有成分未鉴定的金属阶段。这种稀土的氧气为二维磁性材料增加了一个新成员。
The van der Waals material CeOI is predicted to be a layered antiferromagnetic Mott insulator by DFT+U calculation. We successfully grow the CeOI films down to monolayer on graphene/6H-SiC(0001) substrate by using molecular beam epitaxy. Films are studied by {\it in-situ} scanning tunneling microscopy and spectroscopy, which shows a band gap of 4.4 eV. A metallic phase with composition unidentified also exists. This rare earth oxyhalide adds a new member to the two-dimensional magnetic materials.
