论文标题
在谐振隧道二极管（RTD）中，模拟设备参数的最佳值为峰值与山谷电流比（PVCR）的仿真
Simulation of Optimum values of device parameters to attain Peak to Valley current Ratio (PVCR) in Resonant tunneling diodes (RTD)
论文作者
论文摘要
提出了根据RTD中有效的质量和屏障高度，可以达到最佳井宽，屏障宽度和间隔层的宽度。发现最佳的垫片层是与相应有限量子的结合状态相关的De-Broglie波长的一半。最佳参数的拟议关系可用于根据任意两种适当的材料设计RTD，以获得最高的PVCR。研究了掺杂浓度对PVCR和峰值电流的影响。作为案例研究，我们考虑了GAAS/GA0.7AL0.3AS和GAN/GA0.7AL0.3N RTDS。使用基于转移矩阵方法的隧道系数获得的电流密度可以考虑材料介电常数的变化，以说明井和屏障区域的电场变化。
Relations for the optimum well width, barrier width and width of the spacer layer to achieve highest PVCR on the basis of effective mass and barrier height in RTDs is proposed. The optimum spacer layer is found to be half of the de-Broglie wavelength associated with the bound state of the corresponding finite quantum well. The proposed relations for the optimum parameters can be used to design RTD based on any two appropriate materials to attain highest PVCR. The effect of doping concentrations on PVCR and peak current was studied. As case study, we have considered the GaAs/Ga0.7Al0.3As and GaN/Ga0.7Al0.3N RTDs. The current density obtained using the tunneling coefficient based on transfer matrix approach takes in to account the variation in the electric field in the well and barrier region on account of variation in the dielectric constant in the material.
