论文标题
使用可伸缩CVD石墨烯的高质量电运
High-quality electrical transport using scalable CVD graphene
论文作者
论文摘要
在兼容Fab兼容的尺度上生产和操纵石墨烯，同时保持其非凡的载流子迁移率，这是最终确定其技术应用的关键。我们表明，大规模方法（对Cu的化学蒸气沉积，然后进行聚合物介导的半干递移）产生单层石墨烯晶体，就电子传输而言，完全可比较到微型机械剥落的片。 HBN用于封装石墨烯晶体$ - $，而无需与生长催化剂$ - $分离并研究其在现场效应设备中的内在特性。在室温下，电子 - phonon耦合将移动性设置为$ \ sim1.3 \ times10^5 $ cm $^2 $ v $^{ - 1} $ s $ s $^{ - 1} $ at $ \ sim10^{11} $ \ sim10^{11} $ cm $ $ $ cm $^{ - 2} $ limplation。 At cryogenic temperatures, the mobility ($ > 6\times10^5$ cm$^2$V$^{-1}$s$^{-1}$ at $\sim10^{11}$ cm$^{-2}$) is limited by the devices' physical edges, and charge fluctuations $ < 7\times10^9$ cm$^{-2}$ are detected.在垂直磁场下，我们观察到Landau量化的早期发作（$ b \ sim50 $ mt）和电子相关的签名，包括分数量子厅效应。
Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliated flakes. hBN is used to encapsulate the graphene crystals $-$ without taking part to their detachment from the growth catalyst $-$ and study their intrinsic properties in field-effect devices. At room temperature, the electron-phonon coupling sets the mobility to $\sim1.3 \times10^5$ cm$^2$V$^{-1}$s$^{-1}$ at $\sim10^{11}$ cm$^{-2}$ concentration. At cryogenic temperatures, the mobility ($ > 6\times10^5$ cm$^2$V$^{-1}$s$^{-1}$ at $\sim10^{11}$ cm$^{-2}$) is limited by the devices' physical edges, and charge fluctuations $ < 7\times10^9$ cm$^{-2}$ are detected. Under perpendicular magnetic fields, we observe early onset of Landau quantization ($B\sim50$ mT) and signatures of electronic correlation, including the fractional quantum Hall effect.
