论文标题
在外延HF0.5ZR0.5O2薄膜中稳定极性菱形阶段的指南
Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films
论文作者
论文摘要
基于Hafnia的系统中非常规Si兼容的铁电性，仅在纳米尺寸下才能稳健，引起了很多兴趣。 While a metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111).在这些系统上的结果中，我们在这里报告了一项系统的研究，旨在确定在各种底物（Perovskites，Hexagonal and Si）上稳定稳定的全球全球趋势，以稳定外延薄膜（6 nm）中的R型多晶型物。
The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading towards identifying comprehensive global trends for stabilizing r-phase polymorphs in epitaxially grown HZO thin films (6 nm) on various substrates (perovskites, hexagonal and Si).
