论文标题
超洁净的sige/si/sige量子井中运输中强相关的表现
Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells
论文作者
论文摘要
我们观察到，在超清洁的SIGE/SI/SIGE量子井中的强烈相互作用的二维电子系统中，金属 - 绝缘体转变附近的金属侧的电阻率随温度降低而增加，在某个温度下达到最大值，然后降低一个阶数。我们将电阻率数据扩展到对密切相关的费米系统运输的期望，并在广泛的电子密度上找到与理论几乎完美的一致性。
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.
