论文标题

通过调整电子结构和载体注入来控制高谐波生成

Control of high-harmonic generation by tuning the electronic structure and carrier injection

论文作者

Nishidome, Hiroyuki, Nagai, Kohei, Uchida, Kento, Ichinose, Yota, Yomogida, Yohei, Tanaka, Koichiro, Yanagi, Kazuhiro

论文摘要

高谐波产生(HHG)是多种光学谐波光的生成,是一种非常规的非线性光学现象,超出了扰动状态。最初在气态介质中观察到的HHG最近在固态材料中得到了证明。如何控制极端的非线性光学现象是一个具有挑战性的主题。与原子气体相比,固态材料在控制电子结构和载体注入方面具有优势。在这里,我们通过使用单壁碳纳米管(SWCNT)调整电子结构和载体注入来证明HHG的控制。我们揭示了从金属到半导体的一系列电子结构的SWCNT高谐波光谱的系统变化。我们通过将电子和孔注射调节到半导体SWCNT中通过电解质门控来增强或减少谐波生成多个数量级。这些结果为在现场效应晶体管设备概念中控制HHG开辟了一种方法。

High-harmonic generation (HHG), which is generation of multiple optical harmonic light, is an unconventional nonlinear optical phenomenon beyond perturbation regime. HHG, which was initially observed in gaseous media, has recently been demonstrated in solid state materials. How to control the extreme nonlinear optical phenomena is a challenging subject. Compared to atomic gases, solid state materials have advantages in controlling electronic structures and carrier injection. Here, we demonstrate control of HHG by tuning electronic structure and carrier injection using single-walled carbon nanotubes (SWCNTs). We reveal systematic changes in the high-harmonic spectra of SWCNTs with a series of electronic structures from a metal to a semiconductor. We demonstrate enhancement or reduction of harmonic generation by more than one order of magnitude by tuning electron and hole injection into the semiconductor SWCNTs through electrolyte gating. These results open a way to control HHG within the concept of field effect transistor devices.

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