论文标题
2D半导体INSE中的电子电子相互作用
Electron-Electron Interactions in 2D Semiconductor InSe
论文作者
论文摘要
2D Van der Waals结构中的电子电子相互作用（EEIS）是对物理学高兴趣的主题之一。我们报告了在低场弱定位/抗静脉状态以外的多层2D半导体INSE中观察到负抛物线磁性（MR），并为这种MR行为的EEI起源提供了证据。此外，我们在费米液体理论的框架内分析了EEI（温度依赖性电导和霍尔系数）的其他观察到的负抛物线MR和其他观察到的量子传输特征，并提取量化电子自旋相互作用强度的栅极电压可调节的费米液体参数$ f_0^σ$。
Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative parabolic MR and other observed quantum transport signatures of EEIs (temperature dependent conductance and Hall coefficient) within the framework of Fermi liquid theory and extract the gate voltage tunable Fermi liquid parameter $F_0^σ$ which quantifies the electron spin-exchange interaction strength.
