论文标题
化学去角质2D MOS_2中异常特性的性质和起源
Nature and Origin of Unusual Properties in Chemically Exfoliated 2D MoS_2
论文作者
论文摘要
已知MOS_2以其二维（2D）形式表现出许多根本有趣且技术上重要的特性。形成大量此类2D样品的最受欢迎的途径之一是化学去角质途径。然而，MOS_2的特定多晶型物的性质和起源主要负责这种壮观的特性，这与T和T'相的主张以及金属和半导体的本质一直存在争议。我们表明，从这些样本中对拉曼光谱的可用文献数据进行了全面的审查，几乎没有范围的这种歧义，从而为在所有此类样本中成为主要的亚稳态状态提供了压倒性的证据。我们还解释说，由于电荷载体的热和化学掺杂，这种小的带隙可能会达到实质性的电导率，从而解释了此类样品的金属和半导体性质的矛盾主张，从而获得了迄今为止所有可用报告的一致观点。
MoS_2 in its two-dimensional (2D) form is known to exhibit many fundamentally interesting and technologically important properties. One of the most popular routes to form extensive amount of such 2D samples is the chemical exfoliation route. However, the nature and origin of the specific polymorph of MoS_2 primarily responsible for such spectacular properties has remained controversial with claims of both T and T' phases as well as metallic and semiconducting natures. We show that a comprehensive scrutiny of the available literature data of Raman spectra from such samples allow little scope for such ambiguities, providing overwhelming evidence for the formation of the T' phase as the dominant metastable state in all such samples. We also explain that this small band-gap T' phase may attain substantial conductivity due to thermal and chemical doping of charge-carriers, explaining the contradictory claims of metallic and semiconducting nature of such samples, thereby attaining a consistent view of all reports available so far.
