论文标题

基于INP/in $ _ {1-x} $ ga $ _x $ as $ _y $ p $ _ {1-y} $ semiciConductor waveductor wavedure平台的芯片波长转换的性能评估。

Performance evaluation of on-chip wavelength conversion based on InP/In$_{1-x}$Ga$_x$As$_y$P$_{1-y}$ semiconductor waveguide platforms

论文作者

Wen, Jin, Li, Kang, Gong, Yongkang, Hughes, Ben, Campbell, Michael A., Lazzaini, Mattia, Duan, Lina, Ma, Chengju, Fan, Wei, Jia, Zhenan, Fu, Haiwei, Copner, Nigel

论文摘要

我们提出和设计高限制INP/IN1-XGAXASYP1-Y半导体波导,并根据此平台报告有效波长转换的结果。分析不同波长下有效的限制和模式场面积波动,以达到高非线性系数。数值结果表明,可以通过对INP/In1-XGAXASYP1-Y波导的分散量裁缝来满足几乎为零的相位不匹配条件,并且可实现最大转换效率-26.3 dB的波长转换范围超过40 nm,以固定泵泵功率100 mW。同时,还讨论和优化了掺杂参数y和泵送波长对带宽和转换效率的影响。它表明INP/IN1-XGAXASYP1-Y波导的出色光学特性,并为直接集成电信频带设备铺平了距离半导体平台上的道路。

We propose and design the high confinement InP/In1-xGaxAsyP1-y semiconductor waveguides and report the results of effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1-xGaxAsyP1-y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency -26.3 dB is achieved for fixing pump power 100 mW. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. It is indicated the excellent optical properties of the InP/In1-xGaxAsyP1-y waveguides and pave the way towards direct integration telecom band devices on stand semiconductor platforms.

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