论文标题
山谷大厅效应由声子和光子阻力引起
Valley Hall effect caused by the phonon and photon drag
论文作者
论文摘要
山谷大厅的效应是山谷电流朝向电流的方向的外观。我们在二维半导体中发展了山谷厅效应的显微镜理论，在这些半导体中电子被声子或光子拖动。我们得出并分析了对山谷电流的所有相关贡献，包括偏斜效应，以及由侧跳和异常速度引起的异常贡献。详细研究了异常贡献的部分补偿。分析了两频和两次突击散射过程的作用。我们还比较了在阻力条件下的山谷大厅效应和由外部静态电场引起的山谷大厅效应。
Valley Hall effect is an appearance of the valley current in the direction transverse to the electric current. We develop the microscopic theory of the valley Hall effect in two-dimensional semiconductors where the electrons are dragged by the phonons or photons. We derive and analyze all relevant contributions to the valley current including the skew-scattering effects together with the anomalous contributions caused by the side-jumps and the anomalous velocity. The partial compensation of the anomalous contributions is studied in detail. The role of two-phonon and two-impurity scattering processes is analyzed. We also compare the valley Hall effect under the drag conditions and the valley Hall effect caused by the external static electric field.
