论文标题

超级刻度现场效应晶体管的二-D材料:从头开始显微镜下的一百个候选物

2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope

论文作者

Klinkert, Cedric, Szabó, Áron, Stieger, Christian, Campi, Davide, Marzari, Nicola, Luisier, Mathieu

论文摘要

由于其独特的属性,单层二维材料似乎是出色的候选者,可以将摩尔的缩放定律范围扩展到当前生产的硅粉料之外。但是,已知的二-D半导体组件,基本上是过渡金属二分法,仍然远离提供预期的性能。基于一项最新的理论研究,该研究预测了1,800多种可去角色的2-D材料的存在,我们在这里研究了100个最有前途的逻辑应用竞争者。它们的“当前与电压”特性是通过第一原理模拟的,结合了密度功能理论和高级量子传输计算。 n-和p型配置都被考虑,门长度从15到5 nm不等。从这个前所未有的电子材料集合中,我们发现了13种具有电子和孔电流的化合物,可能比将来的Si FinFets高得多。最终的数据库广泛扩展了2D晶体管的设计空间,并为材料和设备工程社区提供了原始指南。

Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1,800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications. Their "current vs. voltage" characteristics are simulated from first-principles, combining density-functional theory and advanced quantum transport calculations. Both n- and p-type configurations are considered, with gate lengths ranging from 15 down to 5 nm. From this unprecedented collection of electronic materials, we identify 13 compounds with electron and hole currents potentially much higher than in future Si FinFETs. The resulting database widely expands the design space of 2-D transistors and provides original guidelines to the materials and device engineering community.

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