论文标题
有机多型隧道连接中传输机制的温度依赖性
Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions
论文作者
论文摘要
由于其潜在的应用，已经提出并引起了具有多种抗性状态的有机多种隧道连接（OMFTJS），并引起了密集的兴趣，其中包括基于Memristor和Spintronics Synapse设备的示例。最近已经实现了FE-ORG的铁电极极化，在铁磁铁（FM）/铁电机（FE-ORG）界面上自旋的铁极对照。但是，仍然缺乏对OMFTJ中的传输特性，尤其是有机屏障中铁电域结构与通过屏障的自旋极化电子隧穿之间的相互作用。在这里，我们报告了对LA0.6SR0.4MNO3/PVDF/CO OMFTJS中温度依赖转运行为的系统研究。发现铁电域的热波动在运输特性中起着重要作用。当t> 120K时，在铁电化极化状态下的电阻的相反温度依赖性会导致隧穿电阻（TER）迅速减少。这些结果有助于理解用于为Memristor和Spintronics应用设计高性能OMFTJ的运输属性。
Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized. However, there is still a lack of understanding of the transport properties in OMFTJs, especially the interplay between the ferroelectric domain structure in the organic barrier and the spin-polarized electron tunneling through the barrier. Here, we report on a systematic study of the temperature dependent transport behavior in La0.6Sr0.4MnO3/PVDF/Co OMFTJs. It is found that the thermal fluctuation of the ferroelectric domains plays an important role on the transport properties. When T>120K, the opposite temperature dependence of resistance for in up and down ferroelectric polarization states results in a rapid diminishing of tunneling electroresistance (TER). These results contribute to the understanding of the transport properties for designing high performance OMFTJs for memristor and spintronics applications.
