论文标题
剂量半金属hfte $ \ boldsymbol {_2} $中的散装和表面电子状态
Bulk and surface electronic states in the dosed semimetallic HfTe$\boldsymbol{_2}$
论文作者
论文摘要
用碱金属的分层材料给药已成为ARPES实验中常用的策略。但是,在这种情况下,在结构和电子上,恰好发生的事情仍然是争论的问题。在这里,我们对1T-HFTE $ _2 $进行系统研究,这是一种过渡金属二甲基化元素家族的原型半学。通过利用光子能量依赖性角度分辨光发射光谱(ARPES),我们研究了该材料的电子结构作为钾(K)沉积的函数。从k $ _z $地图中,我们观察到电子给药后的2D色散频段的外观,带有频段的清晰度,与最上层的波函数限制一致。在我们剂量最高的情况下,单层电子结构可能是由于碱金属的插入而产生的。在这里,通过将最高的价带以下$ e_f $,我们可以直接测量$ \ sim $ 0.2 ev的频段重叠。但是,即使在相当大的给药后,3D散装状态仍然有助于光谱。我们的工作为使用ARPE的碱金属剂量越来越流行的研究提供了参考点。
The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-resolved photoemission spectroscopy (ARPES), we have investigated the electronic structure of this material as a function of Potassium (K) deposition. From the k$_z$ maps, we observe the appearance of 2D dispersive bands after electron dosing, with an increasing sharpness of the bands, consistent with the wavefunction confinement at the topmost layer. In our highest-dosing cases, a monolayer-like electronic structure emerges, presumably as a result of intercalation of the alkali metal. Here, by bringing the topmost valence band below $E_F$, we can directly measure a band overlap of $\sim$ 0.2 eV. However, 3D bulk-like states still contribute to the spectra even after considerable dosing. Our work provides a reference point for the increasingly popular studies of the alkali metal dosing of semimetals using ARPES.