论文标题

磁性二阶绝缘体的通用方法

Universal Approach to Magnetic Second-Order Topological Insulator

论文作者

Chen, Cong, Song, Zhida, Zhao, Jian-Zhou, Chen, Ziyu, Yu, Zhi-Ming, Sheng, Xian-Lei, Yang, Shengyuan A.

论文摘要

我们提出了一种通用实用方法,以实现磁性二阶拓扑绝缘子(SOTI)材料,该材料基于适当打破常规(一阶)拓扑绝缘子中的时间反向对称性。该方法适用于三个维度(3D)和两个维度(2D),并且特别适合2D,可以通过将量子自旋霍尔绝缘子与磁性基板耦合来实现。使用第一原理计算,我们可以预测EUO(111)表面上的bismuthene是2D磁SOTI的第一个现实系统。我们明确证明了受保护角状态的存在。这些角状态受益于大型自旋轨道耦合和相当大的磁接近效应,位于边界间隙$ \ sim 83 $ MEV中,因此可以在实验中很容易探测。通过控制磁相跃迁,可以同时在系统中同时实现一阶Ti和SOTI之间的拓扑相变。讨论了对称性破坏的影响,与填充异常的联系以及实验检测的影响。

We propose a universal practical approach to realize magnetic second-order topological insulator (SOTI) materials, based on properly breaking the time reversal symmetry in conventional (first-order) topological insulators. The approach works for both three dimensions (3D) and two dimensions (2D), and is particularly suitable for 2D, where it can be achieved by coupling a quantum spin Hall insulator with a magnetic substrate. Using first-principles calculations, we predict bismuthene on EuO(111) surface as the first realistic system for a 2D magnetic SOTI. We explicitly demonstrate the existence of the protected corner states. Benefited from the large spin-orbit coupling and sizable magnetic proximity effect, these corner states are located in a boundary gap $\sim 83$ meV, hence can be readily probed in experiment. By controlling the magnetic phase transition, a topological phase transition between a first-order TI and a SOTI can be simultaneously achieved in the system. The effect of symmetry breaking, the connection with filling anomaly, and the experimental detection are discussed.

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