论文标题
非氧化铁电的导电域壁SN2P2S6
Conductive Domain Walls in Non-Oxide Ferroelectrics Sn2P2S6
论文作者
论文摘要
在铁电体中广泛研究了导电域壁(CDW),可以将其视为嵌入绝缘材料中的准二维可重构导电通道。因此,这对于使用铁电纳米电子学非常重要。迄今为止,大多数CDW的研究都受到氧化物的限制,并且在非氧化物中据报道有限的工作相反。在这里,通过成功合成非氧化铁电SN2P2S6单晶,我们通过使用不同的扫描探针技术观察并确认了域壁电导率,这些探针技术来自倾斜域壁的性质。此外,由于界面极化电荷和相反的符号,被CDW隔开的结构域还具有可区分的电导率。该结果为理解非氧化铁电性域和域壁的电导率行为提供了新的平台。
The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides to the contrary. Here, by successfully synthesizing the non-oxide ferroelectric Sn2P2S6 single crystal, we observed and confirmed the domain wall conductivity by using different scanning probe techniques which origins from the nature of inclined domain walls. Moreover, the domains separated by CDW also exhibit distinguishable electrical conductivity due to the interfacial polarization charge with opposite signs. The result provides a novel platform for understanding electrical conductivity behavior of the domains and domain walls in non-oxide ferroelectrics.