论文标题
单层过渡金属二分法中线宽度的掺杂依赖性的微观模型
Microscopic model of the doping dependence of line widths in monolayer transition metal dichalcogenides
论文作者
论文摘要
在低温和低掺杂方案中，单层过渡金属二核苷的吸收光谱中掺杂依赖性激子和Trion线宽度的完全显微镜模型。该方法基于扰动理论，并避免了现象学参数的使用。在低掺杂方案中，我们发现Trion线宽度对掺杂水平的宽度相对不敏感，而激子线宽度则随掺杂而单调地增加。另一方面，我们认为Trion线宽度显示出更强的温度依赖性。在低掺杂方案中，以$ t \ geq 20 $ k的封装样品中的声子散射掩盖了线宽度的幅度。我们讨论了扰动理论的分解，该理论应在相对较低的掺杂水平和低温下发生。我们的工作还铺平了理解各种相关散射过程的方式，包括影响电离和清洁2D样品中的螺旋钻。
A fully microscopic model of the doping-dependent exciton and trion line widths in the absorption spectra of monolayer transition metal dichalcogenides in the low temperature and low doping regime is explored. The approach is based on perturbation theory and avoids the use of phenomenological parameters. In the low-doping regime, we find that the trion line width is relatively insensitive to doping levels while the exciton line width increases monotonically with doping. On the other hand, we argue that the trion line width shows a somewhat stronger temperature dependence. The magnitudes of the line widths are likely to be masked by phonon scattering for $T \geq 20$ K in encapsulated samples in the low doping regime. We discuss the breakdown of perturbation theory, which should occur at relatively low doping levels and low temperatures. Our work also paves the way towards understanding a variety of related scattering processes, including impact ionization and Auger scattering in clean 2D samples.
