论文标题
III-V微孔子中的耗散kerr孤子
Dissipative Kerr Solitons in a III-V Microresonator
论文作者
论文摘要
我们通过低温冷却到4〜k和20〜k之间的温度来证明在III-V平台（SIO $ _2 $）中的III-V平台（Sio $ _2 $）中稳定的微孔子soliton频率梳子。这种冷却可降低谐振器的热浪费系数，其室温值比其他微型BOMP平台（如Si $ _3 $ _3 $ _4 $ _4 $，SIO $ _2 $）和ALN（ALN）大的数量级大，并使Soliton States soliton States nates Adibibaratiagiabatiagiabatiage consissiage consitiagiabatiagiagiagnational and Aln。实现这种相稳定的孤子操作对于充分利用该平台表现出的超高有效非线性和高光学质量因素的应用至关重要。
We demonstrate stable microresonator Kerr soliton frequency combs in a III-V platform (AlGaAs on SiO$_2$) through quenching of thermorefractive effects by cryogenic cooling to temperatures between 4~K and 20~K. This cooling reduces the resonator's thermorefractive coefficient, whose room-temperature value is an order of magnitude larger than that of other microcomb platforms like Si$_3$N$_4$, SiO$_2$, and AlN, by more than two orders of magnitude, and makes soliton states adiabatically accessible. Realizing such phase-stable soliton operation is critical for applications that fully exploit the ultra-high effective nonlinearity and high optical quality factors exhibited by this platform.
