论文标题
由于杂质共振引起的超薄拓扑绝缘膜中高度可调的磁耦合
Highly tunable magnetic coupling in ultrathin topological insulator films due to impurity resonances
论文作者
论文摘要
从理论上讲,我们通过考虑到杂质产生的低能状态,从理论上研究了超薄bi $ _2 $ _3 $ _3 $ SE $ _3 $ SE $ _3 $ SE $ _3 $ SE $ _3 $ SE $ _3 $ SE的交换相互作用。我们发现,局部诱导的杂质共振强烈影响磁矩之间的交换相互作用。特别是,我们发现当忽略杂质状态时,非共线比对比共线铁磁对准更有利,并且仅考虑原始的拓扑绝缘体带结构。此外,我们表明,通过应用垂直于超薄膜的电场,交换相互作用可以大大增强。这开启了电场高度可调磁性的可能性。
We theoretically investigate the exchange interaction between magnetic impurities in ultrathin Bi$_2$Se$_3$ topological insulator films by taking into account the low-energy states produced by the impurities. We find that the locally induced impurity resonances strongly influence the exchange interaction between magnetic moments. In particular, we find a non-collinear alignment being more favorable than the collinear ferromagnetic alignment preferred when impurity states are ignored and only the pristine topological insulator band structure is considered. Moreover, we show that by applying of an electric field perpendicular to the ultrathin film, the exchange interaction can be drastically enhanced. This opens for the possibility of highly tunable magnetism by electric field.