论文标题
在外观二维蜂窝si $ _ {6-x} $ ge $ _x $合金中的带隙工程
Bandgap engineering in an epitaxial two-dimensional honeycomb Si$_{6-x}$Ge$_x$ alloy
论文作者
论文摘要
在这封信中，我们证明，可以通过沉积的ge atoms在Zrb $ _2 $（0001）上替换在Zrb $ _2 $（0001）上占据类似平面硅的平面结构的SI原子，形成二维（2D）类似硅的Si $ _5 $ ge化合物。对于低于1/6毫升的覆盖范围，GE沉积产生了Si $ _ {6-X} $ GE $ _ {X} $ Alloy（在0到1之间的$ X $），其中si或ge原子随机占据了上顶站点。 $ x $观察到的价最大值的渐进式增长是从选择性电荷转移从GE原子到SI原子的。这些成就提供了证据，证明有可能在2D SIGE合金中以相似的方式对带隙进行设计。
In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si$_5$Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB$_2$(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si$_{6-x}$Ge$_{x}$ alloy (with $x$ between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms. The progressive increase of the valence band maximum with $x$ observed experimentally originates from a selective charge transfer from Ge atoms to Si atoms. These achievements provide evidence for the possibility of engineering the bandgap in 2D SiGe alloys in a way that is similar for their bulk counterpart.
