论文标题

通过调谐到较高激子状态的纵向光场在量子点中的深色激子制备

Dark Exciton Preparation in a Quantum Dot by a Longitudinal Light Field Tuned to Higher Exciton States

论文作者

Holtkemper, M., Quinteiro, G. F., Reiter, D. E., Kuhn, T.

论文摘要

在量子信息技术中使用半导体量子点的几项重要建议依赖于深色激子基地面状态的控制,例如基于深色激子的Qubits,具有$μ$ S的寿命。在本文中,我们提出了一种通过单个短激光脉冲占据深色激子基态的有效方法。该方案基于具有纵向场成分的光激励,例如径向极化的梁或某些Laguerre-Gauss或Bessel束。利用此组件,我们在配置相互作用方法中显示了可以解决由灯孔激子和更高深的重孔激子组成的高能量激子状态。当较高的激子放松时,会产生一个以其基态的深色激子。

Several important proposals to use semiconductor quantum dots in quantum information technology rely on the control of the dark exciton ground states, such as dark exciton based qubits with a $μ$s life time. In this paper, we present an efficient way to occupy the dark exciton ground state by a single short laser pulse. The scheme is based on an optical excitation with a longitudinal field component featured by, e.g., radially polarized beams or certain Laguerre-Gauss or Bessel beams. Utilizing this component, we show within a configuration interaction approach that high-energy exciton states composed of light-hole excitons and higher dark heavy-hole excitons can be addressed. When the higher exciton relaxes, a dark exciton in its ground state is created.

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