论文标题
Mott绝缘子的热电特性，与微调相关的跳跃
Thermoelectric properties of Mott insulator with correlated hopping at microdoping
论文作者
论文摘要
讨论了Falicov-Kimball模型的轻度掺杂的Mott绝缘子阶段，讨论了通过相关跳跃对电子电荷和热传输引起的巡回电子的定位的影响。考虑到摄入的D-电子状态可能出现在Mott GAP中的DOS上时，具有占用F-电子水平的站点之间的跳跃幅度强烈降低的情况。由于相关跳跃引起的DOS和传输功能的电子孔不对称和异常特征，因此在低温下显示扁平依赖性在较大温度范围内，在低温下观察到Seebeck系数的强大增强。
An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly reduced hopping amplitude between the sites with occupied f-electron levels, when an additional band of localized d-electron states could appear on the DOS in the Mott gap, is considered. Due to the electron-hole asymmetry and anomalous features on the DOS and transport function induced by correlated hopping, a strong enhancement of the Seebeck coefficient is observed at low temperatures, when the flattened dependence is displayed in a wide temperature range.
