论文标题

使用硅光子纳米力学接口转换微波炉和电信光子

Converting microwave and telecom photons with a silicon photonic nanomechanical interface

论文作者

Arnold, G., Wulf, M., Barzanjeh, S., Redchenko, E. S., Rueda, A., Hease, W. J., Hassani, F., Fink, J. M.

论文摘要

实用的量子网络需要低损坏和噪声的光学互连以及非高斯资源来纠缠蒸馏和分布式量子计算。后者可以通过超导电路来提供,但是尽管努力和快速进步,但现有的解决方案可以接口微波炉和光学域缺乏可伸缩性或效率,并且在大多数情况下,转换噪声尚不清楚。在这项工作中,我们利用了硅光子学,腔光力学和超导电路的独特机会,证明了在Millikelikelvin Wistratures处连接微波X和电信S频带的完全集成,相干的传感器,并以总(内部)双向转导效率为1.2%(135%)。耦合仅依赖于两种硅纳米梁的升压计尺度运动介导的辐射压力相互作用,并包括大约20 dB的光力学增益。芯片规模的设备由CMOS兼容的材料制造,并在Sub-NanoWatt泵功率上实现V $_π$低至16 $μ$ V。这种功率高,超敏感和高度集成的混合互连可能会发现从量子通信和RF接收器到磁共振成像的应用。

Practical quantum networks require low-loss and noise-resilient optical interconnects as well as non-Gaussian resources for entanglement distillation and distributed quantum computation. The latter could be provided by superconducting circuits but - despite growing efforts and rapid progress - existing solutions to interface the microwave and optical domains lack either scalability or efficiency, and in most cases the conversion noise is not known. In this work we utilize the unique opportunities of silicon photonics, cavity optomechanics and superconducting circuits to demonstrate a fully integrated, coherent transducer connecting the microwave X and the telecom S bands with a total (internal) bidirectional transduction efficiency of 1.2% (135 %) at millikelvin temperatures. The coupling relies solely on the radiation pressure interaction mediated by the femtometer-scale motion of two silicon nanobeams and includes an optomechanical gain of about 20 dB. The chip-scale device is fabricated from CMOS compatible materials and achieves a V$_π$ as low as 16 $μ$V for sub-nanowatt pump powers. Such power-efficient, ultra-sensitive and highly integrated hybrid interconnects might find applications ranging from quantum communication and RF receivers to magnetic resonance imaging.

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