论文标题
非等温scharfetter-Gummel方案，用于退化半导体中电流传输模拟
Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors
论文作者
论文摘要
非等温漂移扩散系统描述了半导体中的电热运输现象。在假设热电器的开尔文公式时，这些方程式采用非常简单的形式。我们提出了一个新型的，非等热的概括，以遵守费米 - 迪拉克统计的退化半导体的scharfetter-gummel有限体积离散化，该统计数据在离散水平上保留了连续模型的许多结构性。该方法通过杂结双极晶体管的2D模拟证明了这一方法。
Electro-thermal transport phenomena in semiconductors are described by the non-isothermal drift-diffusion system. The equations take a remarkably simple form when assuming the Kelvin formula for the thermopower. We present a novel, non-isothermal generalization of the Scharfetter-Gummel finite volume discretization for degenerate semiconductors obeying Fermi-Dirac statistics, which preserves numerous structural properties of the continuous model on the discrete level. The approach is demonstrated by 2D simulations of a heterojunction bipolar transistor.
