论文标题
分析观点是对基于位置的半导体值对移动电荷进行非侵入性测量的观点
Analytical view on non-invasive measurement of moving charge by position-based semiconductor qubit(s)
论文作者
论文摘要
单电子CMOS设备的框架中显示了自由空间中移动电荷的检测。它为构建新型检测器的构建镜头的视角或用于检测太阳风的梁诊断。在简单的紧密结合模型的框架中给出了作用于半导体量子点基于位置的基于位置量子的噪声的一般现象学模型。此外，加速器光束对2个静电耦合量子的系统的影响是由紧密结合方程式制定的。各种拓扑的基于位置量子位被描述为移动电荷的量子检测器。 关键字：紧密结合模型，基于位置的量子，非侵入性量子测量，量子系统的量子反应性，加速器束诊断，静电噪声，相位旋转门，基于Roton位置的量子
Detection of moving charge in free space is presented in the framework of single electron CMOS devices. It opens the perspective for construction of new type detectors for beam diagnostic in accelerators or for the detection of solar wind. General phenomenological model of noise acting on position based qubit implemented in semiconductor quantum dots is given in the framework of simplistic tight-binding model. Furthermore the effect of accelerator beam on the system of 2 electrostatically coupled qubits is formulated by tight-binding equations. The position based qubits of various topologies are described as quantum detectors of moving electric charge. Keywords: tight-binding model, position-based qubit, non-invasive quantum measurement, quantum decoherence of qubit system, accelerator beam diagnostics, electrostatic noise, phase rotating gate, roton position-based qubit
