论文标题
燃气上的Quasi-One二维BI链的自旋偏振表面传导和价带的一维（110） - （2 $ \ times $ 1）
One-dimensionality of the spin-polarized surface conduction and valence bands of quasi-one-dimensional Bi chains on GaSb(110)-(2$\times$1)
论文作者
论文摘要
在BI/GASB（110） - （2 $ \ times $ 1）的表面电子结构及其以上和低于费米水平（$ e _ {\ rm f} $）的一维（110） - （2 $ \ times $ 1）的表面托管式托管Quasi-One-diemensional（Q1D）BI链，使用常规（单杆）和两范围的Phodectriention（单相）和两范围的Phodectrienty（单相）和两种镜头（计算。 ARPES结果表明，Q1D电子状态在投影的散装带隙内。两光子ARPES和密度功能理论计算的圆形二色性表明，表面状态的清晰自旋和轨道极化与rashba型SOI的巨大尺寸一致，这些大小源自重物的强大贡献。 $ e _ {\ rm f} $以上的表面传导带形成了几乎笔直的恒定能量轮廓，这表明它适用于对具有强SOI的一维电子系统的进一步研究。基于获得的表面电子结构的紧密结合模型计算成功地再现了表面带分散体，并预测了60--100〜K的温度范围内可能的一到二维交叉。
Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the projected bulk bandgap. Circular dichroism of two-photon ARPES and density-functional-theory calculation indicate clear spin and orbital polarization of the surface states consistent with the giant sizes of Rashba-type SOI, derived from the strong contribution of heavy Bi atoms. The surface conduction band above $E_{\rm F}$ forms a nearly straight constant-energy contour, suggesting its suitability for application in further studies of one-dimensional electronic systems with strong SOI. A tight-binding model calculation based on the obtained surface electronic structure successfully reproduces the surface band dispersions and predicts possible one- to two-dimensional crossover in the temperature range of 60--100~K.
